The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Oct. 03, 2003
Masahiro Tanaka, Yokohama, JP;
Shinichi Umekawa, Sagamihara, JP;
Tadashi Matsuda, Yokohama, JP;
Masakazu Yamaguchi, Kawasaki, JP;
Masahiro Tanaka, Yokohama, JP;
Shinichi Umekawa, Sagamihara, JP;
Tadashi Matsuda, Yokohama, JP;
Masakazu Yamaguchi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
The power semiconductor device includes a plurality of trenches disposed in a surface of a semiconductor active layer to reach a first base layer of a first conductivity type. The trenches are disposed at intervals to partition a main cell and a dummy cell. In the main cell, a second base layer of a second conductivity type and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode and gate insulating film are disposed in each trench. A partition structure is disposed in the surface of the semiconductor active layer to electrically isolate the buffer layer from the emitter electrode.