The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2005

Filed:

Sep. 28, 2001
Applicants:

Lan Fu, Palmerston, AU;

Hark Hoe Tan, Garran, AU;

Chennupati Jagadish, Evatt, AU;

Inventors:

Lan Fu, Palmerston, AU;

Hark Hoe Tan, Garran, AU;

Chennupati Jagadish, Evatt, AU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/04 ;
U.S. Cl.
CPC ...
Abstract

A method of disordering a quantum well heterostructure, including the step of irradiating the heterostructure with a particle beam, wherein the energy of the beam is such that the beam creates a substantially constant distribution of defects within the heterostructure. The irradiating particles can be ions or electrons, and the energy is preferably such that the irradiating particles pass through the heterostructure. Light ions such as hydrogen ions are preferred because they are readily available and produce substantially uniform distributions of point defects at relatively low energies. The method can be used to tune the wavelength range of an optoelectronic device including such a heterostructure, such as a photodetector.


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