The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2005

Filed:

Sep. 30, 2003
Applicants:

Akira Yamanoue, Kawasaki, JP;

Satoshi Sekino, Kawasaki, JP;

Inventors:

Akira Yamanoue, Kawasaki, JP;

Satoshi Sekino, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/20 ;
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor device comprises the steps of forming a polysilicon filmon a silicon substrate, implanting a dopant into a region of the polysilicon filmfor a resistance element to be formed in, patterning the polysilicon filmto from the resistance elementof the polysilicon filmwith the dopant inplanted in and gate electrodesof the polysilicon filmwith the dopant not implanted in. Accordingly, resistance element can be formed while suppressing influences on characteristics of the transistor formed on one and the same substrate concurrently with forming the resistance element.


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