The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Sep. 05, 2002
Yoshihisa Abe, Sagamihara, JP;
Shunichi Suzuki, Hadano, JP;
Hideo Nakanishi, Hadano, JP;
Kazutaka Terashima, Ebina, JP;
Jun Komiyama, Hadano, JP;
Yoshihisa Abe, Sagamihara, JP;
Shunichi Suzuki, Hadano, JP;
Hideo Nakanishi, Hadano, JP;
Kazutaka Terashima, Ebina, JP;
Jun Komiyama, Hadano, JP;
Toshiba Ceramics Co, Ltd., Tokyo, JP;
Abstract
A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.