The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Mar. 31, 2000
Hiroaki Takeuchi, Tenri, JP;
Tohru Okuda, Nara, JP;
Hiroaki Takeuchi, Tenri, JP;
Tohru Okuda, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In a plasma processing method making use of a plasma processing gas of a reactant gas and an inert gas, it is aimed at enhancing an efficiency of use of high-frequency power and a reactant gas to increase a processing rate. The plasma processing method comprises supplying high frequency power to an electrodeopposed to a substrateto thereby generate plasma between the electrodeand the substrateon the basis of a plasma processing gas comprising a reactant gas and an inert gas to perform film formation, etching, surface treatment or the like on the substrate, pressure P(Torr) of the plasma processing gas being set to satisfy the following relationship 2×10(Torr/Hz)×f(Hz)≦P(Torr)≦500(Torr) where f(Hz) is a frequency of high frequency power.