The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Apr. 11, 2003
Applicant:
Frank Reinhardt, Tucson, AZ (US);
Inventor:
Frank Reinhardt, Tucson, AZ (US);
Assignee:
Spectra-Physics, Inc., Tucson, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B025/08 ;
U.S. Cl.
CPC ...
Abstract
A method of suppression of Indium carry-over in the MOCVD growth of thin InGaAsP quantum wells, with low Indium content, on top of thick GaInAsP, with high Indium content. These quantum wells are essential in the stimulated emission of 808 to 880 nm phosphorous-based laser structures. The Indium carryover effect is larger in large multi wafer reactors and therefore is this invention focused on large multiwafer MOCVD reactors. This invention improves the quality of the quantum well, as measured by photo-luminescence spectra and uniformity of wavelength radiation.