The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Mar. 16, 2001
Flaminia Serina, Grosse Pointe Farms, MI (US);
Gregory W. Auner, Livonia, MI (US);
Ka Yuen Simon NG, West Bloomfield, MI (US);
Ratna Naik, Ann Arbor, MI (US);
Flaminia Serina, Grosse Pointe Farms, MI (US);
Gregory W. Auner, Livonia, MI (US);
Ka Yuen Simon Ng, West Bloomfield, MI (US);
Ratna Naik, Ann Arbor, MI (US);
Wayne State University, Detroit, MI (US);
Abstract
Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AlN) as the 'insulator' in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AlN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AlN/Si and Pd/AlN/SiC wherein the SiC is preferably 6H—SiC.