The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2005

Filed:

Sep. 18, 2003
Applicants:

Thomas S. Wong, San Jose, CA (US);

Robert W. Bechdolt, San Jose, CA (US);

Phi Thai, San Jose, CA (US);

Inventors:

Thomas S. Wong, San Jose, CA (US);

Robert W. Bechdolt, San Jose, CA (US);

Phi Thai, San Jose, CA (US);

Assignee:

Micrel, Inc., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K019/084 ;
U.S. Cl.
CPC ...
Abstract

A logic gate is described that has an N-type region, which may be an N-well or N-tub, forming a cathode of one or more Schottky diodes and a collector of an NPN bipolar transistor. Accordingly, the Schottly diodes and transistor do not need to be isolated from one another, resulting in a very compact logic gate. The logic gate forms a portion of a NAND function in one embodiment. One or more Schottky diodes between the collector and base of the bipolar transistor act as a clamp to prevent the transistor from saturating. The clamp diodes can also be used to adjust the output voltage of the gate to ensure downstream transistors can be fully turned off.


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