The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Jun. 17, 2004
Charvaka Duvvury, Plano, TX (US);
John E. Kunz, Jr., Allen, TX (US);
Robert M. Steinhoff, Dallas, TX (US);
Charvaka Duvvury, Plano, TX (US);
John E. Kunz, Jr., Allen, TX (US);
Robert M. Steinhoff, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An equipment () for testing semiconductor device performance under high energy pulse conditions, which comprises a high voltage generator () and an on/off switch relay (). The relay is resistively connected by a first resistor () to the generator and by a second resistor () to the socket () for the device-under-test (); the relay is operable in a partially ionized ambient. A capacitor () is connected to the relay, to the generator, and to the device, and is operable to discharge high energy pulses through the device. A third resistor () is in parallel with the capacitor and the device, and is operable to suppress spurious pulses generated by the relay. This third resistor has a value between about 1 kΩ and 1 MΩ, preferably about 10 kΩ, several orders of magnitude greater than the on-resistance of the device-under-test.