The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Sep. 03, 2003
Takashi Yamada, Ebina, JP;
Atsushi Azuma, Wappingers Falls, NY (US);
Yoshihiro Minami, Fujisawa, JP;
Hajime Nagano, Yokohama, JP;
Hiroaki Yamada, Yokohama, JP;
Tatsuya Ohguro, Yokohama, JP;
Kenji Kojima, Yokohama, JP;
Kazumi Inoh, Yokohama, JP;
Takashi Yamada, Ebina, JP;
Atsushi Azuma, Wappingers Falls, NY (US);
Yoshihiro Minami, Fujisawa, JP;
Hajime Nagano, Yokohama, JP;
Hiroaki Yamada, Yokohama, JP;
Tatsuya Ohguro, Yokohama, JP;
Kenji Kojima, Yokohama, JP;
Kazumi Inoh, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A convex polycrystalline silicon film is formed on a handle wafer. A semiconductor layer is formed on the polycrystalline silicon film. The semiconductor is thinner on its areas in which the convex polycrystalline silicon film is formed and is thicker on its areas in which the convex polycrystalline silicon film is not formed. An opening is formed in each of those areas of an insulating film which are located under respective thick-film semiconductor areas of the semiconductor layer. The polycrystalline silicon film is formed in the openings to connect electrically the thick-film semiconductor areas and the handle wafer together.