The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Apr. 29, 2002
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Marcel Ter Beek, Pleasanton, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Marcel ter Beek, Pleasanton, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
In a NPN transistor electrostatic discharge (ESD) protection structure, certain parameters, including maximum lattice temperature, are improved by introducing certain process changes to provide for SCR-like characteristics during ESD events. A p+region is formed adjacent the collector to define a SCR-like emitter and with a common contact with the collector of the BJT. The p+ region is spaced from the n-emitter of the transistor by a n-epitaxial region, and the collector is preferably spaced further from the n-emitter than is the case in a regular BJT.