The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6933582 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 23, 2005

Filed:

Jun. 16, 2003
Applicants:

Seiichiro Ishio, Kariya, JP;

Eishi Kawasaki, Kuwana, JP;

Inventors:

Seiichiro Ishio, Kariya, JP;

Eishi Kawasaki, Kuwana, JP;

Assignee:

Denso Corporation, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/82 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor sensor includes a P-type semiconductor substrate having a N-type semiconductor layer disposed on one surface of the substrate and a P-type diffused resistor disposed in the N-type semiconductor layer. A first electric voltage is applied to the N-type semiconductor layer, a second electric voltage is applied to the substrate, a third electric voltage is applied to the P-type diffused resistor. The first electric voltage is higher than the second and third electric voltages. The sensor ensures stable operation against electric leakage and high noise protection because two depletion layers are formed.


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