The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Dec. 03, 2003
William George En, Milpitas, CA (US);
Witold P. Maszara, Morgan Hill, CA (US);
Mario M. Pelella, Mountain View, CA (US);
William George En, Milpitas, CA (US);
Witold P. Maszara, Morgan Hill, CA (US);
Mario M. Pelella, Mountain View, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A raised source/drain layer is formed on the semiconductor substrate adjacent the gate and the gate dielectric. An amorphized shallow source/drain extension implanted region is formed in the raised source/drain layer and the semiconductor substrate therebeneath. The amorphized region is then recrystallized to form a shallow source/drain extension having residual recrystallization damage elevated into the raised source/drain layer.