The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Mar. 18, 2003
Applicant:
Masahiro Hayashi, Sakata, JP;
Inventor:
Masahiro Hayashi, Sakata, JP;
Assignee:
Seiko Epson Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ;
U.S. Cl.
CPC ...
Abstract
A method is provided for manufacturing a semiconductor device that can secure a high breakdown voltage and yet optimize wells. The semiconductor device includes a semiconductor substrate of a first conductivity type, a well of the first conductivity type, a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a source/drain layer of the second conductivity type formed in the semiconductor substrate. The well of the first conductivity type includes a channel region and is formed in a manner not to overlap the source/drain layers.