The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Sep. 12, 2003
Suk-kyun Lee, Bucheon-city, Gyeonggi-do, KR;
Cheol-joong Kim, Bucheon-city, Gyeonggi-do, KR;
Tae-hun Kwon, Seoul, KR;
Suk-kyun Lee, Bucheon-city, Gyeonggi-do, KR;
Cheol-joong Kim, Bucheon-city, Gyeonggi-do, KR;
Tae-hun Kwon, Seoul, KR;
Other;
Abstract
Power devices in which a low on-resistance can be obtained while maintaining a high breakdown voltage and a method for manufacturing the power devices are described. The power device includes a semiconductor substrate having a first conductivity type, a burying layer having a high concentration of a second conductivity type arranged deep in the semiconductor substrate, a well having a low concentration of a second conductivity type formed on the burying layer of the semiconductor substrate, a body region having a first conductivity type formed in a predetermined portion in the well having a low concentration of a second conductivity type, first and second channel stop regions having a low concentration of a second conductivity type, the first and second channel stop regions are formed in a predetermined portion of the body region and on both edges of the body region having a first conductivity type, a gate electrode including a gate insulating layer, formed on a space between the first and second channel stop regions, source and drain regions having a high concentration of a second conductivity type formed in the first and second channel stop regions on both sides of the gate electrode, and a body contact region formed in the source region. Only the body region having a first conductivity type exists between the first and second channel stop regions, and a channel is formed between the first and second channel stop regions.