The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Dec. 04, 2003
Wiley Eugene Hill, Moss Beach, CA (US);
Haihong Wang, Milpitas, CA (US);
Yider Wu, Campbell, CA (US);
Bin Yu, Cupertino, CA (US);
Wiley Eugene Hill, Moss Beach, CA (US);
Haihong Wang, Milpitas, CA (US);
Yider Wu, Campbell, CA (US);
Bin Yu, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A memory device includes a conductive structure, a number of dielectric layers and a control gate. The dielectric layers are formed around the conductive structure and the control gate is formed over the dielectric layers. A portion of the conductive structure functions as a drain region for the memory device and at least one of the dielectric layers functions as a charge storage structure for the memory device. The dielectric layers may include oxide-nitride-oxide layers.