The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Dec. 30, 2003
Applicants:
Hyun Tak Kim, Daejeon, KR;
Kwang Yong Kang, Daejeon, KR;
Doo Hyeb Youn, Daejeon, KR;
Byung Gyu Chae, Deajeon, KR;
Inventors:
Hyun Tak Kim, Daejeon, KR;
Kwang Yong Kang, Daejeon, KR;
Doo Hyeb Youn, Daejeon, KR;
Byung Gyu Chae, Deajeon, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/772 ; H01L019/12 ;
U.S. Cl.
CPC ...
Abstract
Provided is a field effect transistor. The field effect transistor includes an insulating vanadium dioxide (VO) thin film used as a channel material, a source electrode and a drain electrode disposed on the insulating VOthin film to be spaced apart from each other by a channel length, a dielectric layer disposed on the source electrode, the drain electrode, and the insulating VOthin film, and a gate electrode for applying a predetermined voltage to the dielectric layer.