The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Sep. 30, 1998
Alex Q. Huang, Blacksburg, VA (US);
Alex Q. Huang, Blacksburg, VA (US);
Virginia Tech Intellectual Properties, Inc., Blacksburg, VA (US);
Abstract
A family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor an and off. In a first embodiment of the present invention a family of thyristors are disclosed all of which comprise a pair of MOS transistors, the first of which is connected in series with the thyristor and a second which provides a negative feedback to the thyristor gate. A negative voltage applied to the gate of the first MOS transistor causes the thyristor to turn on to conduct high currents. A zero to positive voltage applied to the first MOS gate causes the thyristor to turn off. The negative feedback insures that the thyristor only operates at its breakover boundaries of the latching condition with the NPN transistor portion of the thyristor operating in the active region. Under this condition, the anode voltage Vcontinues to increase without significant anode current increase. Emitter turn-off (ETO) thyristor fabrication packages are also disclosed having packaged semiconductor devices controlling the thyristor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile