The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
May. 17, 2004
Applicants:
Rajaram Bhat, Painted Post, NY (US);
Nobuhiko Nishiyama, Painted Post, NY (US);
Inventors:
Rajaram Bhat, Painted Post, NY (US);
Nobuhiko Nishiyama, Painted Post, NY (US);
Assignee:
Corning Incorporated, Corning, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/861 ; H01L029/88 ;
U.S. Cl.
CPC ...
Abstract
A tunnel junction device () with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer () of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer () of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction ().