The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Sep. 10, 2002
Applicant:
Woo-young SO, Suwon, KR;
Inventor:
Woo-Young So, Suwon, KR;
Assignee:
Samsung SDI Co., Ltd., Suwon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/04 ; H01L031/036 ; H01L031/0376 ; H01L031/20 ;
U.S. Cl.
CPC ...
Abstract
A CMOS thin film transistor having a semiconductor layer formed in a zigzag form on an insulating substrate, and a PMOS transistor region and an NMOS transistor region and a gate electrode having at least one slot crossing the semiconductor layer, wherein the semiconductor layer has an MILC surface existing on the PMOS transistor region and the NMOS transistor region, and the method of manufacturing the same, whereby a manufacturing process of the CMOS TFT is simple and the leakage current is decreased.