The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
May. 13, 2002
Min-jin Ko, Taejeon, KR;
Bum-gyu Choi, Taejeon, KR;
Dong-seok Shin, Seoul, KR;
Myung-sun Moon, Taejeon, KR;
Jung-won Kang, Seoul, KR;
Hae-young Nam, Cheongju, KR;
Young-duk Kim, Taejeon, KR;
Gwi-gwon Kang, Seoul, KR;
Min-Jin Ko, Taejeon, KR;
Bum-Gyu Choi, Taejeon, KR;
Dong-Seok Shin, Seoul, KR;
Myung-Sun Moon, Taejeon, KR;
Jung-Won Kang, Seoul, KR;
Hae-Young Nam, Cheongju, KR;
Young-Duk Kim, Taejeon, KR;
Gwi-Gwon Kang, Seoul, KR;
LG Chem, Ltd., Seoul, KR;
Abstract
The present invention relates to a low dielectric substance essential for a next generating electrical device such as a semiconductor device having high performance and high density, and particularly to a process for preparing a low dielectric organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer; a process for manufacturing an insulating film using an organosilicate polymer prepared by the process; and an electrical device comprising an insulating film prepared by the process. The organosilicate polymer prepared according the process of the present invention is thermally stable, and has good film-forming prosperities, excellent mechanical strength and crack resistance, and the film manufactured therefrom has excellent insulating properties, film uniformity, dielectric properties, crack resistance, and mechanical strength.