The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2005

Filed:

Jan. 10, 2003
Applicant:

William D. Goodhue, Chelmsford, MA (US);

Inventor:

William D. Goodhue, Chelmsford, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/31 ;
U.S. Cl.
CPC ...
Abstract

A method passivates a surface of a semiconductor structure. The method provides III-V semiconductor material having a surface to be passivated. Upon the surface of the III-V semiconductor material to be passivated an oxide layer is formed. Thereafter, the surface of the III-V semiconductor material having the oxide layer is passivated, without desorption of the oxide layer and in a vacuum of 2×10Torr, with a material having the ability to intermix with the oxide layer so as to exchange oxygen, passivation layer material, and III-V semiconductor material therebetween to form graded layers of oxidized III-V and passivation material.


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