The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Jun. 11, 2002
Christoph Bromberger, Leingarten, DE;
Franz Dietz, Heilbronn, DE;
Volker Dudek, Korntal-Muenchingen, DE;
Michael Graf, Leonberg, DE;
Joern Herrfurth, Heilbronn, DE;
Manfred Klaussner, Heilbronn, DE;
Christoph Bromberger, Leingarten, DE;
Franz Dietz, Heilbronn, DE;
Volker Dudek, Korntal-Muenchingen, DE;
Michael Graf, Leonberg, DE;
Joern Herrfurth, Heilbronn, DE;
Manfred Klaussner, Heilbronn, DE;
Atmel Germany GmbH, Heilbronn, DE;
Abstract
In a method of producing a doped semiconductor structure with a trench, it is possible to set the doping of the trench side walls independently from the doping of the trench bottom, and to set different doping concentrations of the individual trench side walls relative to each other. In the method, a mask layer with a window therein is provided on a surface of a semiconductor body, and then a first doping step, a trench etching step, and a second doping step are carried out successively through this window while this one mask layer remains in place on the surface of the semiconductor body. Further etching and doping steps can be carried out successively also through this window of the mask layer.