The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Jul. 11, 2003
Applicant:
Noh Yeal Kwak, Kyungki-Do, KR;
Inventor:
Noh Yeal Kwak, Kyungki-Do, KR;
Assignee:
Hynix Semiconductor Inc., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/265 ;
U.S. Cl.
CPC ...
Abstract
Disclosed is a method of manufacturing a semiconductor device. A monoatomic dopant having a high atomic weight is implanted to form an ion implantation layer, instead of using a dopant of a small atomic weight such as B or a molecular ion such as a BFin order to control the threshold voltage of the semiconductor device. Therefore, in an annealing process for mitigating damage caused by ion implantation, it is possible to limit TED (transient enhanced diffusion) of the dopant and prevent degradation of the film quality due to outgasing.