The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Nov. 19, 2002
Applicants:
Zhiqiang Wu, Plano, TX (US);
Shaoping Tang, Plano, TX (US);
Jau-yuann Yang, Richardson, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L021/00 ;
U.S. Cl.
CPC ...
Abstract
Methods are provided for forming wells in a semiconductor wafer, in which p-wells and n-wells are formed in a substrate, and first p-type dopants are implanted into n-well regions while an n-well mask remains over the wafer to selectively decrease a substrate resistivity in the n-well regions beneath the n-wells. A subsequent blanket implantation provides second p-type dopants into isolation regions of the substrate beneath isolation structures, where the first and second p-type dopants improve well to well isolation without addition of extra masks to the fabrication process.