The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Sep. 26, 2003
Kazuhito Narita, Yokkaichi, JP;
Eiji Sakagami, Yokkaichi, JP;
Hiroaki Tsunoda, Yokkaichi, JP;
Masahisa Sonoda, Yokkaichi, JP;
Hideyuki Kobayashi, Yokkaichi, JP;
Kazuhito Narita, Yokkaichi, JP;
Eiji Sakagami, Yokkaichi, JP;
Hiroaki Tsunoda, Yokkaichi, JP;
Masahisa Sonoda, Yokkaichi, JP;
Hideyuki Kobayashi, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device including forming a laminate structure which includes a gate insulation film on a semiconductor substrate and a gate electrode material film on the gate insulation film, processing the gate electrode material film to obtain a gate electrode having a reverse tapered cross section, and forming a device isolation insulation film in direct contact with a side surface of the gate electrode.