The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Jul. 28, 2003
Applicants:
Masahiro Kito, Osaka, JP;
Masato Ishino, Osaka, JP;
Tomoaki Toda, Miyagi, JP;
Yoshiaki Nakano, Tokyo, JP;
Inventors:
Masahiro Kito, Osaka, JP;
Masato Ishino, Osaka, JP;
Tomoaki Toda, Miyagi, JP;
Yoshiaki Nakano, Tokyo, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/66 ;
U.S. Cl.
CPC ...
Abstract
In a method for fabricating a semiconductor laser device, a plurality of grooves are formed in a surface of one conductive type of an InP layer. The InP layer is thermally treated in an atmosphere including at least a gas containing phosphorus and a gas containing arsenic in a mixed state, thereby forming a plurality of active regions made of InAsP in the plurality of grooves. An other conductive type of semiconductor layer is formed after the active regions are formed.