The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2005

Filed:

Apr. 11, 2003
Applicant:

Craig A. Brice, Keller, TX (US);

Inventor:

Craig A. Brice, Keller, TX (US);

Assignee:

Lockheed Martin Corporation, Bethesda, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B013/08 ;
U.S. Cl.
CPC ...
Abstract

A single-crystal structure is grown using free-form fabrication through principles of directional solidification and direct-deposition techniques. The structure is formed from a metallic alloy by building from feedstock on top of and upward from a heated base element. The top of the structure is also heated with a scanning beam as it is built. The higher temperatures near the melting alloy tend to promote crystal growth rather than nucleation as the grain grows toward the heat of the scanning beam. This allows a two-dimensional thermal gradient to be formed in the build direction, which allows the solid crystal to maintain one orientation during the deposition process. As the material initially solidifies, it nucleates off of a desired grain that is designated by a grain selector. This method eliminates the need for expensive mold cavities and segmented furnaces that are typically required by prior art processes for producing some components.


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