The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Mar. 14, 2003
Applicants:
Shigeharu Matsushita, Katano, JP;
Yoh Takano, Ogaki, JP;
Satoru Sekine, Gifu, JP;
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C011/22 ;
U.S. Cl.
CPC ...
Abstract
A ferroelectric memory capable of improving disturbance resistance in a non-selected memory cell includes a bit line, a word line arranged to intersect with the bit line, and a memory cell, which is arranged between the bit line and the word line an includes a ferroelectric capacitor and a diode serially connected to the ferroelectric capacitor. Thus, when a voltage in a range hardly feeding a current to the diode is applied to a non-selected cell in data writing or data reading, substantially no voltage is applied to the ferroelectric capacitor.