The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2005

Filed:

Sep. 27, 2001
Applicants:

Takeshi Nobe, Hirakata, JP;

Shigeo Akiyama, Neyagawa, JP;

Noriteru Furumoto, Hirakata, JP;

Takuya Sunada, Osaka, JP;

Inventors:

Takeshi Nobe, Hirakata, JP;

Shigeo Akiyama, Neyagawa, JP;

Noriteru Furumoto, Hirakata, JP;

Takuya Sunada, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H005/00 ;
U.S. Cl.
CPC ...
Abstract

The semiconductor device is inserted between a power source and a load. A current flowing between an external drain terminal D and an external source terminal S is controlled in accordance with a control voltage applied between an external gate terminal G and the external source terminal S. In addition, the semiconductor device has a main MOSFETand a detecting MOSFETeach of which is inserted between the external drain terminal D and the external source terminal S, a protective circuitwhich protects the main MOSFETby a protective transistorwhen the abnormality is detected thereby, and an impedance elementinserted between the protective MOSFET, and a junction connecting the external gate terminal G to a gate electrode of the detecting MOSFET


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