The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Oct. 29, 2003
Katsuhiko Nishiwaki, Toyota, JP;
Tomoyoshi Kushida, Seto, JP;
Katsuhiko Nishiwaki, Toyota, JP;
Tomoyoshi Kushida, Seto, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
It is intended to provide a field-effective-type semiconductor device that can let low ON-resistance and non-excessive short-circuit current go together by effectively using its channel width and prevents device from destruction. In a field-effective-type semiconductor device, a semiconductor region arranged between gate electrodeshas stripe-patterned structure consisting of an Nemitter regionand a P emitter region. The P emitter region is constituted by P channel regionof low concentration and Pemitter regionof high concentration. The Nemitter regionthe P channel regionand the Pemitter regionare in contact with the emitter electrodeThereby, a channel width X is limited to the extent that is enough for ON current under normal operation state. That is, low ON-resistance and not excessive short-circuit current can go together in the field-effective-type semiconductor device.