The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Dec. 30, 2003
Applicant:
Toyokazu Sakata, Tokyo, JP;
Inventor:
Toyokazu Sakata, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract
The present invention provides an auxiliary semiconductor device fabrication method that forms wiringby using the wiring groovethat is formed in the sacrificial oxide film. An interlayer insulating film is formed by removing, by means of etching, the sacrificial oxide film that is used as a mold for the wiring layer formation and then allowing the porous Low-k film to fill the region from which the sacrificial oxide film has been removed.
Sakata, Toyokazu. (2005). Semiconductor device fabrication method (U.S. Patent No. 6930035). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6930035
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile