The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
May. 28, 2002
Sung-je Choi, Seoul, KR;
Han-jin Lim, Seoul, KR;
Sung-Je Choi, Seoul, KR;
Han-Jin Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A method of forming a capacitor having a lower electrode, an upper electrode, and a dielectric layer of an integrated circuit device is provided. A metal compound is adsorbed on the lower electrode by using a gaseous metal compound. A physisorbed metal compound on the lower electrode is purged by using an inert gas. The metal compound adsorbed on the lower electrode is oxidized with an oxidation gas to form a metal oxide. A gaseous product formed by oxidizing the metal compound is purged. Above steps are repeated to form a diffusion barrier layer of the metal oxide. The dielectric layer is formed of TaOon the diffusion barrier layer. A heat treatment is performed for the dielectric layer comprised of TaOunder oxidation atmosphere. The steps are performed in a single atomic layer deposition chamber.