The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Dec. 30, 2004
Dong-kyun Nam, Seongnam-si, KR;
Sung-ryoul Bae, Suwon-si, KR;
Dong-kyun Nam, Seongnam-si, KR;
Sung-ryoul Bae, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a complementary bipolar junction transistor includes forming a polycrystalline silicon layer on an NPN bipolar junction transistor region and a PNP bipolar junction transistor region, respectively implanting an N-type impurity and a P-type impurity into the polycrystalline silicon layer, and then diffusing to respectively form an N-type emitter region and a P-type emitter region within a P-type base region and an N-type base region. By patterning the polycrystalline silicon layer, an N-type emitter electrode and a P-type emitter electrode are simultaneously formed. The polycrystalline silicon layer is used for simultaneously forming the N-type emitter electrode of the NPN bipolar junction transistor and the P-type emitter electrode of the PNP bipolar junction transistor by a single depositing and etching process.