The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Jun. 20, 2002
Applicant:
Thomas G. Bifano, Mansfield, MA (US);
Inventor:
Thomas G. Bifano, Mansfield, MA (US);
Assignee:
The Trustees of Boston University, Boston, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C014/32 ;
U.S. Cl.
CPC ...
Abstract
Method and apparatus for reducing the curvature of a micromachined structure having lamella (). Surface treatment by an ion beam () of the lamella () such as by sputtering removes regions of stress allowing the lamella () to return to a planar condition. The resulting outer surface is made suitable for use as a reflector and other purposes needing a substantially planar surface.
Quick Actions:
Bifano, Thomas. (2005). Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes (U.S. Patent No. 6929721). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6929721
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile