The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Aug. 31, 2001
Hideomi Koinuma, Tokyo, JP;
Masashi Kawasaki, Sendai, JP;
Yuji Matsumoto, Yokohama, JP;
Japan Science and Technology Agency, Kawaguchi, JP;
Abstract
The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.