The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Mar. 12, 2003
Applicants:
Teiichiro Nishizaka, Kanagawa, JP;
Toshikatsu Jinbo, Kanagawa, JP;
Takaki Kohno, Kanagawa, JP;
Inventors:
Assignee:
NEC Electronics Corporation, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/792 ; H01L029/76 ; H01L029/94 ; H01L031/062 ; H01L031/113 ;
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device include a step of forming an insulating layer, which is obtained by building up a first oxide film, a nitride film and a second oxide film on a substrate in the order mentioned, and a Salicide step of forming a Salicide-structure gate electrode on the insulating film. A silicidation reaction between the substrate surface and an N+ diffusion region is prevented in the Salicide step by causing the insulating layer to remain even in a region on the substrate besides that immediately underlying the gate electrode.