The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Jun. 26, 2002
Applicants:
BI O Lim, Seoul, KR;
Han Choon Lee, Daejeon, KR;
Inventors:
Bi O Lim, Seoul, KR;
Han Choon Lee, Daejeon, KR;
Assignee:
DongbuAnam Semiconductor Inc., Seoul, KR;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract
Disclosed is a method and an apparatus for manufacturing a barrier layer of semiconductor device. The disclosed comprises the steps of: forming an interlayer insulating layer having a contact hole on a semiconductor substrate; forming a Ti layer on the contact hole and on the interlayer insulating layer; and reacting the Ti layer with nitrogen radical to transform a part of the Ti layer into a TiN layer.