The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Feb. 23, 2004
Wen Yu, Fremont, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Connie Pin-chin Wang, Menlo Park, CA (US);
Paul Besser, Sunnyvale, CA (US);
Keizaburo Yoshie, Cupertino, CA (US);
Wen Yu, Fremont, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Connie Pin-Chin Wang, Menlo Park, CA (US);
Paul Besser, Sunnyvale, CA (US);
Keizaburo Yoshie, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming a contact in a semiconductor device deposits a refractory metal contact layer in a contact hole on a conductive region portion in a silicon substrate. The refractory metal contact layer is reacted with the silicide region prior to a plasma treatment of a contact barrier metal layer formed within the contact hole. This prevents portions of the refractory metal contact layer from being nitridated prior to conversion to silicide.