The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Sep. 02, 2002
Hans-juergen Lugauer, Sinzing, DE;
Stefan Bader, Eilsbrunn, DE;
Hans-Juergen Lugauer, Sinzing, DE;
Stefan Bader, Eilsbrunn, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
In the process for producing low-defect semiconductor layers based on III-V nitride semiconductor material, a substrate () made from a material which is not based on III-V nitride semiconductors is provided, and then a mask layer () is applied to the substrate in order to form unmasked regions () and masked regions () on the substrate. Then, starting from the unmasked regions () of the substrate (), the III-V nitride semiconductor layer () is grown. To avoid the formation of stress-induced cracks during the cooling phase from the growth temperature to room temperature, the mask layer () is formed on the substrate () in such a manner that some of the masked regions () are wide enough to prevent the III-V nitride semiconductor layer () from growing together over these wide masked regions (), whereas the III-V nitride semiconductor layer does grow together only over the other, narrow masked regions ().