The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Dec. 04, 2003
Noh Yeal Kwak, Ichon-Shi, KR;
Noh Yeal Kwak, Ichon-Shi, KR;
Hynix Semiconductor Inc., Kyungki-Do, KR;
Abstract
A method of manufacturing a semiconductor device is disclosed which comprises, forming a first well region by performing an ion implantation process for implanting first ions into a semiconductor substrate, and then forming a second well region in the first well region by performing an ion implantation process for implanting second ions having larger mass than the first ions; and forming a three-part or three-fold well region by performing an annealing process on the result structure wherein the lighter first ions are disposed in the upper and lower well regions and the heavier second ions are disposed in the middle well region. Therefore, it is possible to prevent TED phenomenon generated due to the high-energy heat treatment process to be performed later and to provide the increased activation ratio of ions compared to the conventional source/drain region in which only the ions having large mass are implanted by performing an annealing process after the first well region and the second well region are formed.