The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Jul. 11, 2003
Applicant:
Noh Yeal Kwak, Kyungki-Do, KR;
Inventor:
Noh Yeal Kwak, Kyungki-Do, KR;
Assignee:
Hynix Semiconductor Inc., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/04 ;
U.S. Cl.
CPC ...
Abstract
Disclosed is a method of manufacturing a semiconductor device. In ion implantation process for controlling the threshold voltage of the transistor or the semiconductor device such as a flash memory cell, the dose of the impurity capable of securing the uniformity is implanted by minimum. The retained dose of the impurity is controlled by out gassing the implanted impurity by means of a cleaning process. Therefore, a uniform distribution characteristic of the implanted impurity could be obtained. A transistor or a flash memory cell of a low operating voltage could be manufactured.