The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
May. 30, 2003
Applicant:
Hui-chu Lin, Hsinchu, TW;
Inventor:
Hui-Chu Lin, Hsinchu, TW;
Assignee:
Toppoly Optoelectronics Corp., Miaoli, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05H001/00 ;
U.S. Cl.
CPC ...
Abstract
A method for forming a silicon oxide layer in the production of the polysilicon film transistor is disclosed. A plasma surface treatment is performed over a substrate after an amorphous silicon layer has been formed on the substrate by PECVD to transform a portion of the amorphous silicon layer into a superficial oxide layer.