The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
May. 09, 2003
Lung-han Peng, Taipei, TW;
Way-seen Wang, Taipei, TW;
Shu-mei Tsan, Kaohsiung, TW;
Yi-chun Shih, Taipei, TW;
Yung-chang Zhang, Taipei, TW;
Chao-ching Hsu, Taoyuan, TW;
Lung-Han Peng, Taipei, TW;
Way-Seen Wang, Taipei, TW;
Shu-Mei Tsan, Kaohsiung, TW;
Yi-Chun Shih, Taipei, TW;
Yung-Chang Zhang, Taipei, TW;
Chao-Ching Hsu, Taoyuan, TW;
National Taiwan University, Taipei, TW;
Abstract
The present invention relates to a method to control the nucleation and transverse motion of 180° inverted domains in ferroelectric nonlinear crystals. It includes a process composing of a high temperature oxidation of the first metal layer and a pulsed field poling of the second electrodes. The main object of present invention is to provide domain inversion of ferroelectric nonlinear crystals with field control the nucleation and transverse motion of inverted domains and two-dimension nonlinear photonic crystals for time-domain multiple-wave simultaneous lasers and space filter function. Another object of present invention is to provide space-charge effect for screened edge field beneath the metal electrode, The other object of present invention is to provide the constraint of inverted domain nucleation in the oxidized electrode for arbitrarily geometrical form of 2D ferroelectric lattice structure.