The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Feb. 05, 2003
Applicant:
Arjang Fartash, Corvallis, OR (US);
Inventor:
Arjang Fartash, Corvallis, OR (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J002/05 ;
U.S. Cl.
CPC ...
Abstract
The invention includes a method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas. The method of the present invention may include selecting a pressure of nitrogen residual gas during plasma sputtering corresponding to a predefined ratio of beta- to alpha-tantalum. The method may be performed at substrate temperatures less than 300° C. Mixed-phase compressive tantalum thin films and fluid ejection devices are also disclosed.
Fartash, Arjang. (2005). Method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas, thin films and fluid ejection devices including same (U.S. Patent No. 6926390). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6926390
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile