The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
May. 22, 2003
Chao-yun Cheng, Pingjen, TW;
Shin-jien Kuo, Taipei, TW;
Chih-chung Chuang, Junghe, TW;
Shu-feng Wu, Taoyuan, TW;
Chao-Yun Cheng, Pingjen, TW;
Shin-Jien Kuo, Taipei, TW;
Chih-Chung Chuang, Junghe, TW;
Shu-Feng Wu, Taoyuan, TW;
Au Optronics Corp., Hsinchu, TW;
Abstract
A method for cleaning a plasma chamber after metal etching. First, a substrate having a metal layer thereon is placed in a plasma chamber. Next, the metal layer is etched. Finally, the substrate is removed from the plasma chamber to perform a dry cleaning which includes the following steps. First, the inner wall of the plasma chamber is cleaned by plasma etching using oxygen as a process gas. Next, the top and bottom electrode plates in the plasma chamber are cleaned by plasma etching using chlorine and boron chloride as process gases. Next, the inner wall of the plasma chamber is cleaned again by plasma etching using sulfur hexafluoride and oxygen as process gases. Finally, oxygen and helium used as purging gases are injected into the plasma chamber and exhausted from therein.