The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Sep. 30, 2003
Steve Vernon, Pleasanton, CA (US);
Tiziana C. Bond, Livermore, CA (US);
Steven W. Bond, Livermore, CA (US);
Michael D. Pocha, Livermore, CA (US);
Stefan Hau-riege, Fremont, CA (US);
Steve Vernon, Pleasanton, CA (US);
Tiziana C. Bond, Livermore, CA (US);
Steven W. Bond, Livermore, CA (US);
Michael D. Pocha, Livermore, CA (US);
Stefan Hau-Riege, Fremont, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiOsubstrate, a Si film and an SiOfilm, the formation of guided wave structures is particularly simple.