The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Oct. 29, 2002
Tsutomu Ishikawa, Kawasaki, JP;
Hirohiko Kobayashi, Kawasaki, JP;
Norihiko Sekine, Kawasaki, JP;
Hajime Shoij, Kawasaki, JP;
Tsutomu Ishikawa, Kawasaki, JP;
Hirohiko Kobayashi, Kawasaki, JP;
Norihiko Sekine, Kawasaki, JP;
Hajime Shoij, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A gain-coupled DFB laser diode includes a multiple quantum well active layer and a pair of cladding layers sandwiching the multiple quantum well active layer vertically, wherein the multiple quantum well active layer includes a plurality of gain regions aligned in a direction of propagation of a laser beam and repeated periodically, each of the gain regions having a multiple quantum well structure, and a buried layer fills a gap between a pair of adjacent gain regions, wherein the buried layer includes a plurality of high-refractive index layers and a plurality of low-refractive index layers, each of the high-refractive index layers is formed of a first semiconductor material having a first bandgap, while each of the low-refractive index layers is formed of a second semiconductor material having a second, larger bandgap.