Ferroelectric memory and method of operating same

Abstract

A ferroelectric memoryincludes a group of memory cells (), each cell having a ferroelectric memory element (etc.), a drive line (etc.) on which a voltage for writing information to the group of memory cells is placed, a bit line (etc.) on which information to be read out of the group of memory cells is placed, a preamplifier (etc.) between the memory cells and the bit line, a set switch (etc.) connected between the drive line and the memory cells, and a reset switch (etc.) connected to the memory cells in parallel with the preamplifier. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.