The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Mar. 11, 2002
Yuko Uchimaru, Tsukuba, JP;
Masami Inoue, Tokyo, JP;
Yuko Uchimaru, Tsukuba, JP;
Masami Inoue, Tokyo, JP;
National Institute of Advanced Industrial Science, Tokyo, JP;
Technology Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A low-dielectric-constant interlayer insulating film, which is composed of at least one selected from the group consisting of: (i) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B',B″-triethynyl-N,N′,N″-trimethylborazine with a specific silicon compound having at least two hydrosilyl groups; and (ii) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B′,B″-triethynyl-N,N′,N″-trimethylborazine with a specific cyclic silicon compound having at least two hydrosilyl groups. A semiconductor device, which has the low-dielectric-constant interlayer insulating film. A low-refractive-index material, which is composed of the polymer substance (i) and/or (ii).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile